bc636...bc640 pnp silicon epitaxial planar transistor medium power transistors for audio and video amplifiers absolute maximum ratings (t a = 25 o c) parameter symbol value unit collector base voltage bc636 bc638 bc640 -v cbo 45 60 100 v collector emitter voltage bc636 bc638 bc640 -v ceo 45 60 80 v emitter base voltage -v ebo 5 v collector current -i c 1 a peak collector current -i cm 1.5 a base current -i b 100 ma peak base current -i bm 200 ma power dissipation p tot 830 mw junction temperature t j 150 o c storage temperature range t stg - 65 to + 150 o c 1. emitter 2. collector 3. base to-92 plastic package
bc636...bc640 characteristics at t a = 25 o c parameter symbol min. max. unit dc current gain at -v ce = 2 v, -i c = 5 ma at -v ce = 2 v, -i c = 150 ma current gain group at -v ce = 2 v, -i c = 500 ma -10 -16 h fe h fe h fe h fe 40 63 100 25 - 160 250 - - - - - collector base cutoff current at -v cb = 30 v -i cbo - 100 na emitter base cutoff current at v eb = 5 v -i ebo - 100 na collector base breakdown voltage at -i c = 100 a bc636 bc638 bc640 -v (br)cbo 45 60 100 - - - v collector emitter breakdown voltage at -i c = 10 ma bc636 bc638 bc640 -v (br)ceo 45 60 80 - - - v emitter base breakdown voltage at -i e = 10 a -v (br)ebo 5 - v collector emitter saturation voltage at -i c = 500 ma, -i b = 50 ma -v ce(sat) - 0.5 v base emitter voltage at -v ce = 2 v, -i c = 500 ma -v be - 1 v gain bandwidth product at -v ce = 5 v, -i c = 50 ma, f = 100 mhz f t 100 - mhz
bc636...bc640
|
